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        Page 2 QW-BB008 REV:C Comchip Technology CO., LTD. Rating and Characteristic Curves (CDBM220-G Thru. CDBM2100-G) Fig.1 Reverse Characteristics I R , R e v e r s e L e a k a g e C u r r e n t ( m A ) Percent of Rated Peak Reverse Voltage (%) 0 120 200 Fig.3 Junction Capacitance 0 C J , J u n c t i o n C a p a c i t a n c e ( p F ) VR, Reverse Voltage (V) 300 700 0.01 1 0.01 10 100 100 Fig.4 Current Derating Curve 0 I O , A v e r a g e F o r w a r d C u r r e n t ( A ) TA, Ambient Temperature (°C) 0.8 1.4 0.6 0.1 20 160 100 0.2 100 400 600 0.4 40 80 160 1 60 120 1.0 1.2 =75 OC TJ =25 OC TJ 0.1 10 200 500 140 40 80 Fig.5 Non-repetitive Forward Surge Current 0 I F S M , P e a k F o r w a r d S u r g e C u r r e n t ( A ) Number of Cycles at 60Hz 50 1 10 100 20 40 10 30 =25 OC TJ 8.3ms single half sine wave, JEDEC method D B M 2 2 0 -G ~ 2 4 0 -G C C D B M 2 5 0 -G ~ 2 1 0 0 -G SMD Schottky Barrier Rectifiers f=1MHz Applied 4VDC reverse voltage Fig.2 Typical Forward Characteristics 0.01 I F , I n s t a n t a n e o u s F o r w a r d C u r r e n t ( A ) VF, Forward Voltage (V) 0.1 1.5 100 0.3 0.5 0.7 1.3 0.9 1.1 0.1 1 10 =25 OC TJ Pulse width 300μs 1% duty cycle G6 M2 0- DB~ -C 00-G -250 G BMCD G4 M2 0- DB~ C -220 G BMCD 1M2 DB~C -280 G BMCD |